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BLV920 - UHF power transistor

Datasheet Summary

Description

NPN silicon planar epitaxial transistor intended for common emitter class-AB operation.

The transistor is encapsulated in a 6-lead SOT171A flange envelope with a ceramic cap.

All leads are isolated from the flange.

Features

  • Internal input matching to achieve high power gain and easy design of wideband circuits.
  • Emitter ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability.

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Datasheet Details

Part number BLV920
Manufacturer NXP
File Size 109.99 KB
Description UHF power transistor
Datasheet download datasheet BLV920 Datasheet
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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLV920 UHF power transistor Product specification Supersedes data of 1995 Apr 10 1997 Nov 17 Philips Semiconductors Product specification UHF power transistor FEATURES • Internal input matching to achieve high power gain and easy design of wideband circuits • Emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATIONS • Base station transmitters in the 820 to 960 MHz range. handbook, halfpage BLV920 DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171A flange envelope with a ceramic cap. All leads are isolated from the flange.
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