BLV2N60 - N-channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.

Designed for high efficiency switch mode power supply.

SHANGHAI BELLING

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Datasheet Details

Part number	BLV2N60
Manufacturer	SHANGHAI BELLING
File Size	456.36 KB
Description	N-channel Enhancement Mode Power MOSFET
Datasheet	BLV2N60 Datasheet
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Full PDF Text Transcription

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BLV2N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified • Fast Switching • Simple Drive Requirements BVDSS RDS(ON) ID 600V 4.4Ω 2A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply.

Published: Dec 18, 2006 |