BLV297 - N-Channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.

Designed for high efficiency logic level circuit.

BELLING

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Datasheet Details

Part number	BLV297
Manufacturer	BELLING
File Size	79.75 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	BLV297 Datasheet
Additional preview pages of the BLV297 datasheet.

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Full PDF Text Transcription

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BLV297 N-channel Enhancement Mode Power MOSFET • Ease of Paralleling • Fast Switching • Simple Drive Requirements BVDSS RDS(ON) ID 200V 2.0Ω 0.65A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency logic level circuit.

Published: Jul 19, 2015 |