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BLV25 - VHF power transistor

Datasheet Summary

Description

N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m.

broadcast transmitters.

Features

  • internally matched input for wideband operation and high power gain;.
  • multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile;.
  • gold-metallization ensures excellent reliability. The transistor has a 1⁄2in 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK.

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Datasheet Details

Part number BLV25
Manufacturer NXP
File Size 83.71 KB
Description VHF power transistor
Datasheet download datasheet BLV25 Datasheet
Additional preview pages of the BLV25 datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BLV25 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast transmitters. FEATURES • internally matched input for wideband operation and high power gain; • multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile; • gold-metallization ensures excellent reliability. The transistor has a 1⁄2in 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit. MODE OPERATION narrow band; c.w.
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