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BLV33F - NPN SILICON RF POWER TRANSISTOR

Datasheet Summary

Description

The ASI BLV33F is Designed for Operation in Band III TV Transposers and Transmitter Amplifiers from 170 to 230 MHz.

Features

  • Gold Metalization.
  • Internal Input Matching.
  • Omnigold™ Metalization System.

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Datasheet Details

Part number BLV33F
Manufacturer Advanced Semiconductor
File Size 23.68 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet BLV33F Datasheet
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Full PDF Text Transcription

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BLV33F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV33F is Designed for Operation in Band III TV Transposers and Transmitter Amplifiers from 170 to 230 MHz. FEATURES: • Gold Metalization • Internal Input Matching • Omnigold™ Metalization System PACKAGE STYLE .500 6L FLG MAXIMUM RATINGS IC VCB VCE PDISS TJ TSTG θJC O O 10 A 60 V 35 V 140 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 1.5 C/W O O O O 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER ORDER CODE: ASI10493 O CHARACTERISTICS SYMBOL BVCEO BVCER BVEBO ICES hFE Cob GPE IMD3 IC = 50 mA IC = 50 mA IE = 10 mA VE = 28 V VCE = 5.0 V VCB = 28 V TC = 25 C NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 35 60 4.0 5 UNITS V V V mA --pF dB IC = 1.0 A f = 1.0 MHz ICQ = 3.
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