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BLV33F - VHF linear power transistor

Datasheet Summary

Description

NPN silicon planar epitaxial transistor encapsulated in a 1⁄ ” 6 lead SOT119A capstan package with ceramic cap.

2 All leads are isolated from the flange.

Features

  • Internally matched input for wideband operation and high power gain.
  • Diffused emitter ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability.

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Datasheet preview – BLV33F

Datasheet Details

Part number BLV33F
Manufacturer NXP
File Size 148.71 KB
Description VHF linear power transistor
Datasheet download datasheet BLV33F Datasheet
Additional preview pages of the BLV33F datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BLV33F VHF linear power transistor Product specification 1996 Oct 10 Philips Semiconductors Product specification VHF linear power transistor FEATURES • Internally matched input for wideband operation and high power gain • Diffused emitter ballasting resistors for an optimum temperature profile • Gold metallization ensures excellent reliability. APPLICATIONS • Primarily intended for use in linear VHF amplifiers for television transmitters and transposers. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 1⁄ ” 6 lead SOT119A capstan package with ceramic cap. 2 All leads are isolated from the flange.
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