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BLV32F - NPN SILICON RF POWER TRANSISTOR

Datasheet Summary

Description

The ASI BLV32F is Designed for in linear v.h.f.

amplifiers of television transmitters and transporters.

Features

  • Diffused emitter ballasting resistors.
  • PG = 16 dB at 10 W/224 MHz.
  • Omnigold™ Metalization System.

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Datasheet preview – BLV32F

Datasheet Details

Part number BLV32F
Manufacturer Advanced Semiconductor
File Size 18.99 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet BLV32F Datasheet
Additional preview pages of the BLV32F datasheet.

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Full PDF Text Transcription

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BLV32F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLV32F is Designed for in linear v.h.f. amplifiers of television transmitters and transporters. FEATURES: • Diffused emitter ballasting resistors • PG = 16 dB at 10 W/224 MHz • Omnigold™ Metalization System PACKAGE STYLE .500 6L FLG MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θJC O O 4.0 A 60 V 32 V 60 V 4.0 V 82 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 2.1 C/W O O O O 1= Collector 2= Base 3 and 4= Emitter CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICES hFE CC PG IC = 15 mA IE = 10 mA VCE = 32 V VCE = 25 V VCB = 25 V VCE = 25 V TC = 25 C O NONETEST CONDITIONS IC = 100 mA MINIMUM TYPICAL MAXIMUM 32 60 4.0 5.0 UNITS V V V mA --pF dB IC = 1.6 A f = 1.
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