Datasheet4U Logo Datasheet4U.com

BLV12 - VHF power transistor

Datasheet Summary

Description

NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT123 flange envelope with a ceramic cap.

It is designed for common emitter, class-B operation in mobile VHF transmitters with a supply voltage of 12.5 V.

All leads are isolated from the mounting flange.

Features

  • Emitter-ballasting resistors for an optimum temperature profile.
  • Excellent reliability.
  • Withstands full load mismatch.

📥 Download Datasheet

Datasheet preview – BLV12

Datasheet Details

Part number BLV12
Manufacturer NXP
File Size 72.07 KB
Description VHF power transistor
Datasheet download datasheet BLV12 Datasheet
Additional preview pages of the BLV12 datasheet.

📁 Similar Datasheet

  • BLV108 - Vertical N-channel MOSFET (SHANGHAI BELLING)
  • BLV1N60 - N-Channel Enhancement Mode Power MOSFET (BELLING)
  • BLV1N60A - N-Channel Enhancement Mode Power MOSFET (BELLING)
  • BLV297 - N-Channel Enhancement Mode Power MOSFET (BELLING)
  • BLV2N60 - N-channel Enhancement Mode Power MOSFET (SHANGHAI BELLING)
  • BLV30 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
  • BLV31 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
  • BLV32F - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
  • BLV33F - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
  • BLV40N20 - N-Channel Enhancement Mode Power MOSFET (BELLING)
Other Datasheets by NXP
  • BLV10 - VHF power transistor
  • BLV100 - UHF power transistor
  • BLV103 - UHF power transistor
  • BLV11 - VHF power transistor
  • BLV193 - UHF power transistor
  • BLV194 - UHF power transistor
  • BLV20 - VHF power transistor
  • BLV2042 - UHF power transistor

Full PDF Text Transcription

Click to expand full text
DISCRETE SEMICONDUCTORS DATA SHEET BLV12 VHF power transistor Product specification September 1991 Philips Semiconductors Product specification VHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile • Excellent reliability • Withstands full load mismatch. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 4-lead SOT123 flange envelope with a ceramic cap. It is designed for common emitter, class-B operation in mobile VHF transmitters with a supply voltage of 12.5 V. All leads are isolated from the mounting flange. PINNING - SOT123 PIN 1 2 3 4 DESCRIPTION collector emitter base emitter handbook, halfpage BLV12 QUICK REFERENCE DATA RF performance at Tmb = 25 °C in a common emitter test circuit. MODE OF OPERATION c.w.
Published: |