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BLV2046 - UHF power transistor

Datasheet Summary

Description

DESCRIPTION NPN silicon planar transistor in a 2-lead SOT460A flange package with a ceramic cap.

The emitter is connected to the flange.

Features

  • Emitter ballasting resistors for optimum temperature profile.
  • Gold metallization ensures excellent reliability.
  • Internal input and output matching to achieve high power gain and collector efficiency for an easy design of wideband circuits.

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Datasheet Details

Part number BLV2046
Manufacturer NXP
File Size 128.07 KB
Description UHF power transistor
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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BLV2046 UHF power transistor Product specification 1997 Aug 22 Philips Semiconductors Product specification UHF power transistor FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input and output matching to achieve high power gain and collector efficiency for an easy design of wideband circuits. APPLICATIONS • Common emitter class-AB operation in PCN and PCS applications in the 1800 to 1990 MHz frequency range. 2 BLV2046 PINNING - SOT460A PIN 1 2 3 SYMBOL c b e base emitter, connected to flange DESCRIPTION collector handbook, halfpage 1 3 Top view MBK093 DESCRIPTION NPN silicon planar transistor in a 2-lead SOT460A flange package with a ceramic cap.
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