BLV4N60 - N-channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.

Designed for high efficiency switch mode power supply.

SHANGHAI BELLING

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Datasheet Details

Part number	BLV4N60
Manufacturer	SHANGHAI BELLING
File Size	463.00 KB
Description	N-channel Enhancement Mode Power MOSFET
Datasheet	BLV4N60 Datasheet
Additional preview pages of the BLV4N60 datasheet.

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BLV4N60 N-channel Enhancement Mode Power MOSFET • Avalanche Energy Specified • Fast Switching • Simple Drive Requirements BVDSS RDS(ON) ID 600V 2.2Ω 4A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol VDS VGS ID IDM PD EAS IAR EAR Tj TSDG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current ( TC=100 oC) Drain Current (pulsed) (Note 1) Power Dissipation Linear Derating Factor Single Pulsed Avalanche Energy (Note2) Avalanche Current Repetitive Avalanche Energy Operating Junction Temperature Range Storage Temperature Range Value 600 + 20 4 2.53 16 104 0.

Published: Dec 18, 2006 |