BLV909 Datasheet PDF - NXP UHF power transistor Specs

BLV909 - UHF power transistor

Datasheet Summary

Description

NPN silicon planar epitaxial transistor in an 8-lead SOT409B SMD package with a ceramic cap.

All leads are isolated from the mounting base.

Features

Emitter ballasting resistors for optimum temperature profile.
Gold metallization ensures excellent reliability.
Internal input matching to achieve high power gain and easy design of wideband circuits.

Datasheet Details

Part number	BLV909
Manufacturer	NXP
File Size	122.03 KB
Description	UHF power transistor
Datasheet	BLV909 Datasheet
Additional preview pages of the BLV909 datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET M3D175 BLV909 UHF power transistor Product speciﬁcation Supersedes data of 1996 Nov 04 1999 Jun 25 Philips Semiconductors Product speciﬁcation UHF power transistor FEATURES • Emitter ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability • Internal input matching to achieve high power gain and easy design of wideband circuits. APPLICATIONS • Common emitter class-AB operation in base stations in the 820 to 960 MHz frequency range. DESCRIPTION NPN silicon planar epitaxial transistor in an 8-lead SOT409B SMD package with a ceramic cap. All leads are isolated from the mounting base.

Published: Mar 23, 2005 |