Datasheet4U Logo Datasheet4U.com

BLV92 - UHF power transistor

Datasheet Summary

Description

N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz communications band.

Features

  • BLV92.
  • multi-base structure and emitter-ballasting resistors for an optimum temperature profile.
  • internal input matching to achieve an optimum wideband capability and high power gain.
  • gold metallization ensures excellent reliability. The transistor has a 6-lead flange envelope with a ceramic cap (SOT-171). All leads are isolated from the flange. QUICK.

📥 Download Datasheet

Datasheet preview – BLV92

Datasheet Details

Part number BLV92
Manufacturer NXP
File Size 63.76 KB
Description UHF power transistor
Datasheet download datasheet BLV92 Datasheet
Additional preview pages of the BLV92 datasheet.

📁 Similar Datasheet

  • BLV91 - UHF power transistor (Philips)
  • BLV91-SL - UHF power transistor (Philips)
  • BLV108 - Vertical N-channel MOSFET (SHANGHAI BELLING)
  • BLV1N60 - N-Channel Enhancement Mode Power MOSFET (BELLING)
  • BLV1N60A - N-Channel Enhancement Mode Power MOSFET (BELLING)
  • BLV297 - N-Channel Enhancement Mode Power MOSFET (BELLING)
  • BLV2N60 - N-channel Enhancement Mode Power MOSFET (SHANGHAI BELLING)
  • BLV30 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
  • BLV31 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
  • BLV32F - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
Other Datasheets by NXP
  • BLV920 - UHF power transistor
  • BLV90 - UHF power transistor
  • BLV904 - UHF power transistor
  • BLV909 - UHF power transistor
  • BLV910 - UHF power transistor
  • BLV93 - UHF power transistor
  • BLV934 - UHF power transistor
  • BLV935 - UHF power transistor

Full PDF Text Transcription

Click to expand full text
DISCRETE SEMICONDUCTORS DATA SHEET BLV92 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz communications band. FEATURES BLV92 • multi-base structure and emitter-ballasting resistors for an optimum temperature profile • internal input matching to achieve an optimum wideband capability and high power gain • gold metallization ensures excellent reliability. The transistor has a 6-lead flange envelope with a ceramic cap (SOT-171). All leads are isolated from the flange. QUICK REFERENCE DATA R.F.
Published: |