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BLV75-12 - VHF power transistor

This page provides the datasheet information for the BLV75-12, a member of the BLV75 VHF power transistor family.

Datasheet Summary

Description

N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band.

Features

  • multi-base structure and emitter-ballasting resistors for an optimum temperature profile.
  • gold metallization ensures excellent reliability.
  • internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange. QUICK.

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Datasheet preview – BLV75-12

Datasheet Details

Part number BLV75-12
Manufacturer Philips
File Size 88.28 KB
Description VHF power transistor
Datasheet download datasheet BLV75-12 Datasheet
Additional preview pages of the BLV75-12 datasheet.

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Full PDF Text Transcription

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DISCRETE SEMICONDUCTORS DATA SHEET BLV75/12 VHF power transistor Product specification August 1986 http://www.Datasheet4U.com Philips Semiconductors Product specification VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band. FEATURES • multi-base structure and emitter-ballasting resistors for an optimum temperature profile • gold metallization ensures excellent reliability • internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange. QUICK REFERENCE DATA R.F.
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