BLV7N60 - N-channel Enhancement Mode Power MOSFET

Datasheet Summary

Description

This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.

Designed for high efficiency switch mode power supply.

Estek

📥 Download Datasheet

Datasheet Details

Part number	BLV7N60
Manufacturer	Estek
File Size	391.61 KB
Description	N-channel Enhancement Mode Power MOSFET
Datasheet	BLV7N60 Datasheet
Additional preview pages of the BLV7N60 datasheet.

📁 Similar Datasheet

BLV7N60 - N-Channel Enhancement Mode Power MOSFET (BELLING)
BLV7002 - N-channel Enhancement Mode Vetical D-MOS Transistor (SHANGHAI BELLING)
BLV730 - N-channel Enhancement Mode Power MOSFET (BELLING)
BLV740 - N-channel Enhancement Mode Power MOSFET (BELLING)
BLV75 - VHF power transistor (Philips)
BLV75-12 - VHF power transistor (Philips)
BLV10 - VHF power transistor (NXP)
BLV100 - UHF power transistor (NXP)
BLV103 - UHF power transistor (NXP)
BLV108 - Vertical N-channel MOSFET (SHANGHAI BELLING)

Other Datasheets by Estek

Full PDF Text Transcription

Click to expand full text

BLV7N60 N-channel Enhancement Mode Power MOSFET • • • Avalanche Energy Specified Fast Switching Simple Drive Requirements BVDSS RDS(ON) ID 600V 1.0Ω 7A Description This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol VDS VGS ID IDM PD EAS IAR EAR Tj TSDG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current ( TC=100 oC) Drain Current (pulsed) (Note 1) Power Dissipation Linear Derating Factor Single Pulsed Avalanche Energy (Note2) Avalanche Current Repetitive Avalanche Energy Operating Junction Temperature Range Storage Temperature Range Value 600 + 20 7 4.43 28 125 1.0 667 7 12.

Published: May 5, 2014 |