NCEAP40T20AD Datasheet PDF - NCE Power Semiconductor Automotive N-Channel Super Trench Power MOSFET Specs

NCEAP40T20AD - Automotive N-Channel Super Trench Power MOSFET

Datasheet Summary

Description

The NCEAP40T20AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

VDS =40V,ID =295A RDS(ON)=1.3mΩ , typical@ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
Pb-free lead plating.
175°C operating temperature.
100% UIS tested.
100% ΔVds tested.
AEC-Q101 qualified TO-263 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package AP40T20AD NCEAP40T20AD TO-263-2L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless.

Datasheet Details

Part number	NCEAP40T20AD
Manufacturer	NCE Power Semiconductor
File Size	715.30 KB
Description	Automotive N-Channel Super Trench Power MOSFET
Datasheet	NCEAP40T20AD Datasheet
Additional preview pages of the NCEAP40T20AD datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com NCEAP40T20AD NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP40T20AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● Automotive application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features ● VDS =40V,ID =295A RDS(ON)=1.

Published: Oct 25, 2024 |