NCEAP40P80K - Automotive P-Channel Power MOSFET

Datasheet Summary

Description

The NCEAP40P80K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

VDS =-40V,ID =-95A RDS(ON)=7.2mΩ (typical) @ VGS=-10V RDS(ON)=11mΩ (typical) @ VGS=-4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating.
100% UIS tested.
100% ΔVds tested.
AEC-Q101 qualified.

NCE Power Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	NCEAP40P80K
Manufacturer	NCE Power Semiconductor
File Size	392.88 KB
Description	Automotive P-Channel Power MOSFET
Datasheet	NCEAP40P80K Datasheet
Additional preview pages of the NCEAP40P80K datasheet.

📁 Similar Datasheet

NCE0103 - N-Channel 100V MOSFET (VBsemi)
NCE0157A2 - N-Channel Power MOSFET (VBsemi)
NCE01H16 - N-Channel MOSFET (VBsemi)
NCE02H10T - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
NCE1520 - N-Channel 150-V MOSFET (VBsemi)
NCE1540KA - N-Channel 150V MOSFET (VBsemi)
NCE1570 - N-Channel 150V MOSFET (VBsemi)
NCE2025I - N-Channel MOSFET (VBsemi)
NCE2025S - N-Channel MOSFET (VBsemi)
NCE20H11 - N-Channel 20V MOSFET (VBsemi)

Other Datasheets by NCE Power Semiconductor

NCEAP40T11G - Automotive N-Channel Super Trench Power MOSFET
NCEAP40T13AGU - Automotive N-Channel Super Trench Power MOSFET
NCEAP40T20AD - Automotive N-Channel Super Trench Power MOSFET
NCEAP40T20AGU - Automotive N-Channel Super Trench Power MOSFET
NCEAP0178AK - Automotive N-Channel Super Trench Power MOSFET
NCEAP028N85D - Automotive N-Channel Super Trench II Power MOSFET
NCE0102 - N-Channel Enhancement Mode Power MOSFET
NCE0102M - N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text

http://www.ncepower.com NCEAP40P80K NCE Automotive P-Channel Super Trench Power MOSFET Description The NCEAP40P80K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =-40V,ID =-95A RDS(ON)=7.2mΩ (typical) @ VGS=-10V RDS(ON)=11mΩ (typical) @ VGS=-4.

Published: Nov 4, 2025 |