Datasheet4U Logo Datasheet4U.com

NCEAP40T11G - Automotive N-Channel Super Trench Power MOSFET

Datasheet Summary

Description

switching performance.

Qg.

Features

  • VDS =40V,ID =150A RDS(ON)=2.2mΩ (typical) @ VGS=10V RDS(ON)=3.3mΩ (typical) @ VGS=4.5V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.
  • 100% ΔVds tested.
  • AEC-Q101 qualified DFN 5X6 Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package AP40T11G NCEAP40T11G DFN5X6-8L Reel Size - Tape w.

📥 Download Datasheet

Datasheet preview – NCEAP40T11G

Datasheet Details

Part number NCEAP40T11G
Manufacturer NCE Power Semiconductor
File Size 663.87 KB
Description Automotive N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEAP40T11G Datasheet
Additional preview pages of the NCEAP40T11G datasheet.

📁 Similar Datasheet

  • NCE0103 - N-Channel 100V MOSFET (VBsemi)
  • NCE0157A2 - N-Channel Power MOSFET (VBsemi)
  • NCE01H16 - N-Channel MOSFET (VBsemi)
  • NCE02H10T - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
  • NCE1520 - N-Channel 150-V MOSFET (VBsemi)
  • NCE1540KA - N-Channel 150V MOSFET (VBsemi)
  • NCE1570 - N-Channel 150V MOSFET (VBsemi)
  • NCE2025I - N-Channel MOSFET (VBsemi)
  • NCE2025S - N-Channel MOSFET (VBsemi)
  • NCE20H11 - N-Channel 20V MOSFET (VBsemi)
Other Datasheets by NCE Power Semiconductor
  • NCEAP40T13AGU - Automotive N-Channel Super Trench Power MOSFET
  • NCEAP40T20AD - Automotive N-Channel Super Trench Power MOSFET
  • NCEAP40T20AGU - Automotive N-Channel Super Trench Power MOSFET
  • NCEAP40P80K - Automotive P-Channel Power MOSFET
  • NCEAP0178AK - Automotive N-Channel Super Trench Power MOSFET
  • NCEAP028N85D - Automotive N-Channel Super Trench II Power MOSFET
  • NCE0102 - N-Channel Enhancement Mode Power MOSFET
  • NCE0102M - N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text
http://www.ncepower.com NCEAP40T11G NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP40T11G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● Automotive application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features ● VDS =40V,ID =150A RDS(ON)=2.2mΩ (typical) @ VGS=10V RDS(ON)=3.3mΩ (typical) @ VGS=4.
Published: |