NCEAP028N85D Datasheet PDF - NCE Power Semiconductor Automotive N-Channel Super Trench II Power MOSFET Specs

NCEAP028N85D - Automotive N-Channel Super Trench II Power MOSFET

Datasheet Summary

Description

switching performance.

RDS(ON) and Qg.

Features

VDS =85V,ID =220A RDS(ON)=2.4mΩ , typical @ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175°C operating temperature.
Pb-free lead plating.
100% UIS tested.
100% ΔVds tested.
AEC-Q101 qualified TO-263 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package AP028N85D NCEAP028N85D TO-263 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless ot.

Datasheet Details

Part number	NCEAP028N85D
Manufacturer	NCE Power Semiconductor
File Size	851.00 KB
Description	Automotive N-Channel Super Trench II Power MOSFET
Datasheet	NCEAP028N85D Datasheet
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Full PDF Text Transcription

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http://www.ncepower.com NCEAP028N85D NCE Automotive N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● Automotive application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features ● VDS =85V,ID =220A RDS(ON)=2.

Published: Oct 25, 2024 |