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NCEAP0178AK - Automotive N-Channel Super Trench Power MOSFET

Datasheet Summary

Description

The NCEAP0178AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =100V,ID =78A RDS(ON) =7.2mΩ(typical) @ VGS=10V RDS(ON) =9.5mΩ(typical) @ VGS=4.5V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.
  • 100% ΔVds tested.
  • AEC-Q101 qualified.

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Datasheet preview – NCEAP0178AK

Datasheet Details

Part number NCEAP0178AK
Manufacturer NCE Power Semiconductor
File Size 548.55 KB
Description Automotive N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEAP0178AK Datasheet
Additional preview pages of the NCEAP0178AK datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com NCEAP0178AK NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP0178AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =100V,ID =78A RDS(ON) =7.2mΩ(typical) @ VGS=10V RDS(ON) =9.5mΩ(typical) @ VGS=4.
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