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NCEAP40T13AGU - Automotive N-Channel Super Trench Power MOSFET

Datasheet Summary

Description

The NCEAP40T13AGU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =40V,ID =190A (Silicon Limited) RDS(ON)=1.8mΩ (typical) @ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.
  • 100% ΔVds tested.
  • AEC-Q101 qualified DFN 5X6 Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package AP40T13AGU NCEAP40T13AGU DFN5X6-8L Reel Size - Tape width - Quanti.

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Datasheet Details

Part number NCEAP40T13AGU
Manufacturer NCE Power Semiconductor
File Size 527.80 KB
Description Automotive N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEAP40T13AGU Datasheet
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Full PDF Text Transcription

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http://www.ncepower.com NCEAP40T13AGU NCE Automotive N-Channel Super Trench Power MOSFET Description The NCEAP40T13AGU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● Automotive application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features ● VDS =40V,ID =190A (Silicon Limited) RDS(ON)=1.
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