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NCE6990 - N-Channel Enhancement Mode Power MOSFET

Description

The NCE6990 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =69V,ID =90A RDS(ON) < 7.0mΩ @ VGS=10V (Typ:5.7mΩ) Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Datasheet Details

Part number NCE6990
Manufacturer NCE Power Semiconductor
File Size 395.36 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE6990 Datasheet

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE6990 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6990 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =69V,ID =90A RDS(ON) < 7.0mΩ @ VGS=10V (Typ:5.
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