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NCE60ND18G - N-Channel Enhancement Mode Power MOSFET

Description

The NCE60ND18G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =60V,ID =18A RDS(ON).

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Datasheet Details

Part number NCE60ND18G
Manufacturer NCE Power Semiconductor
File Size 368.84 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE60ND18G Datasheet
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http://www.ncepower.com Pb Free Product NCE60ND18G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND18G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =18A RDS(ON) <35mΩ @ VGS=10V Schematic diagram RDS(ON) <40mΩ @ VGS=4.
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