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NCE60ND09AS - N-Channel Enhancement Mode Power MOSFET

Description

The NCE60ND09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = 60V,ID =9A RDS(ON) < 15mΩ @ VGS=10V RDS(ON) < 18mΩ @ VGS=10V (Typ:10mΩ) (Typ:14mΩ) Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Low gate to drain charge to reduce switching losses.

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Datasheet preview – NCE60ND09AS

Datasheet Details

Part number NCE60ND09AS
Manufacturer NCE Power Semiconductor
File Size 416.44 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE60ND09AS Datasheet
Additional preview pages of the NCE60ND09AS datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com NCE60ND09AS NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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