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CJP55H12 - N-Channel MOSFET

Description

provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and un

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Datasheet Details

Part number CJP55H12
Manufacturer JCET
File Size 374.56 KB
Description N-Channel MOSFET
Datasheet download datasheet CJP55H12 Datasheet
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP55H12 N-Channel Power MOSFET TO-220-3L-C GENERAL DESCRIPTION The CJP55H12 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. FEATURE  High density cell design for ultra low Rdson  Fully characterized avalanche voltage and current  Good stability and uniformity with high EAS  Excellent package for good heat dissipation  Special process technology for high ESD capability 1. GATE 2. DRAIN 3.
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