Datasheet4U Logo Datasheet4U.com

CJP05N60B - N-Channel MOSFET

Description

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.

This new recovery time.

📥 Download Datasheet

Datasheet preview – CJP05N60B

Datasheet Details

Part number CJP05N60B
Manufacturer JCET
File Size 541.51 KB
Description N-Channel MOSFET
Datasheet download datasheet CJP05N60B Datasheet
Additional preview pages of the CJP05N60B datasheet.

📁 Similar Datasheet

  • CJP02N60 - Power MOSFET (Jiangsu Changjiang Electronics Technology)
  • CJP03N60 - Power MOSFET (Jiangsu Changjiang Electronics Technology)
  • CJP04N20 - Power MOSFET (Jiangsu Changjiang Electronics Technology)
  • CJP06N60 - Power MOSFET (Jiangsu Changjiang Electronics Technology)
  • CJP07N20 - Power MOSFET (Jiangsu Changjiang Electronics Technology)
  • CJP10N60 - N-Channel Power MOSFET (JIANGSU CHANGJIANG)
  • CJP1117-1.5 - 1A LOW DROPOUT LINEAR REGULATOR (Jiangsu Changjiang)
  • CJP1117-1.8 - 1A LOW DROPOUT LINEAR REGULATOR (Jiangsu Changjiang)
  • CJP1117-2.5 - 1A LOW DROPOUT LINEAR REGULATOR (Jiangsu Changjiang)
  • CJP1117-3.3 - 1A LOW DROPOUT LINEAR REGULATOR (Jiangsu Changjiang)
Other Datasheets by JCET

Full PDF Text Transcription

Click to expand full text
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP05N60B V(BR)DSS 600V N-Channel Power MOSFET RDS(on)MAX ID 2.5Ω@10V 5A TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new recovery time. Desighed for high voltage, high speed switching high energy device also offers a drain-to-source diode fast applications such as power supplies, converters, power motor controls and bridge circuits. 1. GATE 2. DRAIN 3.
Published: |