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CJP07N50M1 - N-Channel Power MOSFET

Description

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode fast recovery time.

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Datasheet preview – CJP07N50M1

Datasheet Details

Part number CJP07N50M1
Manufacturer JCET
File Size 1.22 MB
Description N-Channel Power MOSFET
Datasheet download datasheet CJP07N50M1 Datasheet
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Full PDF Text Transcription

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JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. TO-220-3L Plastic-Encapsulate MOSFETS CJP07N50M1 N-Channel Power MOSFET V(BR)DSS RDS(on)TYP ID 500V 0.6Ω@10V 7A GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE  High Current Rating  Lower Capacitance  Lower Total Gate Charge  Tighter VSD Specifications  Avalanche Energy Specified  Fast Switching Capability TO-220-3L 1. GATE 2. DRAIN 3. SOURCE 123 MARKING EQUIVALENT CIRCUIT 07N50M1 = Device code.
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