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CJP04N60 - N-Channel MOSFET

Description

This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently.

1.

GATE 2.

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Datasheet Details

Part number CJP04N60
Manufacturer JCET
File Size 1.00 MB
Description N-Channel MOSFET
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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP04N60 V(BR)DSS 600V 600V N-Channel Power MOSFET RDS(on)MAX ID 3Ω@10V 4A TO-220-3L General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode wigh fast 1. GATE 2. DRAIN 3. SOURCE 12 3 recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
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