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CJP05N60 - N-Channel MOSFET

Description

high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode with fast recovery time.

Features

  • z Low RDS(on) z Lower Capacitances z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified 2.Drain TO-220-3L 1. GATE 2. DRAIN 3. SOURCE 1.Gate 3.Source Maximum ratings (Ta=25℃ unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Continuous Drain Current Single Pulsed Avalanche Energy (note1) Power Dissipation (note2,Ta=25℃) Maximum Power Dissipation (note3,Tc=25℃) Thermal Resistance from Junction to Ambient Junction Temperature Storage Tem.

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Datasheet Details

Part number CJP05N60
Manufacturer JCET
File Size 536.34 KB
Description N-Channel MOSFET
Datasheet download datasheet CJP05N60 Datasheet
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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP05N60 N-Channel Power MOSFET Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits. FEATURES z Low RDS(on) z Lower Capacitances z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified 2.Drain TO-220-3L 1. GATE 2. DRAIN 3. SOURCE 1.Gate 3.
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