Datasheet4U Logo Datasheet4U.com

CJP02N65 - N-Channel MOSFET

Description

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.

This new recovery time.

📥 Download Datasheet

Datasheet preview – CJP02N65

Datasheet Details

Part number CJP02N65
Manufacturer JCET
File Size 1.07 MB
Description N-Channel MOSFET
Datasheet download datasheet CJP02N65 Datasheet
Additional preview pages of the CJP02N65 datasheet.

📁 Similar Datasheet

  • CJP02N60 - Power MOSFET (Jiangsu Changjiang Electronics Technology)
  • CJP03N60 - Power MOSFET (Jiangsu Changjiang Electronics Technology)
  • CJP04N20 - Power MOSFET (Jiangsu Changjiang Electronics Technology)
  • CJP06N60 - Power MOSFET (Jiangsu Changjiang Electronics Technology)
  • CJP07N20 - Power MOSFET (Jiangsu Changjiang Electronics Technology)
  • CJP10N60 - N-Channel Power MOSFET (JIANGSU CHANGJIANG)
  • CJP1117-1.5 - 1A LOW DROPOUT LINEAR REGULATOR (Jiangsu Changjiang)
  • CJP1117-1.8 - 1A LOW DROPOUT LINEAR REGULATOR (Jiangsu Changjiang)
  • CJP1117-2.5 - 1A LOW DROPOUT LINEAR REGULATOR (Jiangsu Changjiang)
  • CJP1117-3.3 - 1A LOW DROPOUT LINEAR REGULATOR (Jiangsu Changjiang)
Other Datasheets by JCET

Full PDF Text Transcription

Click to expand full text
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP02N65 V(BR)DSS 650V N-Channel Power MOSFET RDS(on)MAX ID 4.4Ω@10V 2A TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new recovery time. Desighed for high voltage, high speed switching high energy device also offers a drain-to-source diode fast applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified 1. GATE 2. DRAIN 3.
Published: |