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CJP04N65 - N-Channel MOSFET

Description

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode fast recovery time.

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Datasheet Details

Part number CJP04N65
Manufacturer JCET
File Size 1.21 MB
Description N-Channel MOSFET
Datasheet download datasheet CJP04N65 Datasheet
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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP04N65 V(BR)DSS 650V N-Channel Power MOSFET RDS(on)MAX ID 3Ω@10V 4A TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. 1. GATE 2. DRAIN 3.
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