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CJP04N60A - N-Channel MOSFET

Description

This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode fast recovery time.

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Datasheet preview – CJP04N60A

Datasheet Details

Part number CJP04N60A
Manufacturer JCET
File Size 1.15 MB
Description N-Channel MOSFET
Datasheet download datasheet CJP04N60A Datasheet
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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP04N60A V(BR)DSS 600V N-Channel Power MOSFET RDS(on)MAX ID 3Ω@10V 4A TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified 1. GATE 2. DRAIN 3.
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