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CJP50N06 - N-Channel MOSFET

Description

The CJP50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

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Datasheet Details

Part number CJP50N06
Manufacturer JCET
File Size 1.11 MB
Description N-Channel MOSFET
Datasheet download datasheet CJP50N06 Datasheet
Additional preview pages of the CJP50N06 datasheet.

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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP50N06 V(BR)DSS 60V N-Channel Power MOSFET RDS(on)MAX   20mΩ@10V ID 50A TO-220-3L-C   GENERAL DESCRIPTION The CJP50N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURE z High density cell design for ultra low Rdson z Fully characterized avalanche voltage and current z Good stability and uniformity with high EAS z Excellent package for good heat dissipation z Special process technology for high ESD capability APPLICATION z Power switching application z Hard switched and high frequency circuits z Uninterruptible power supply 1. GATE 2. DRAIN 3.
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