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IRLS3813PBF - POWER MOSFET

Features

  • 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 Fig 14. Single Avalanche Current vs. pulse Width 1.0E-01 5 www. irf. com © 2014 International Rectifier Submit Datasheet Feedback January 23, 2014   RDS(on), Drain-to -Source On Resistance (m) 6 ID = 148A 5 4 3 TJ = 125°C 2 1 TJ = 25°C 0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 15. Typical On-Resistance vs. Gate Voltage 6 IF = 99A 5 VR = 26V TJ = 25°C TJ = 125°C 4 IRRM (A) 3 2 IRRM (A) VGS(th), Ga.

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Application  Brushed motor drive applications  BLDC motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC inverters Benefits  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant IRLS3813PbF HEXFET® Power MOSFET  D VDSS 30V RDS(on) typ. 1.60m G max 1.
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