Datasheet4U Logo Datasheet4U.com

IRLS540A - Advanced Power MOSFET

Features

  • n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 μA (Max. ) @ VDS = 100V n Lower RDS(ON) : 0.046Ω (Typ. ) IRLS540A BVDSS = 100 V RDS(on) = 0.058Ω ID = 17 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRLS-G5653 INTEGRATED SWITCHER International Rectifier
IRLS3034-7PPBF 40V Single N-Channel HEXFET Power MOSFET International Rectifier
IRLS3034PBF 40V Single N-Channel HEXFET Power MOSFET International Rectifier
IRLS3034PBF N-Channel MOSFET INCHANGE
IRLS3036 N-Channel MOSFET INCHANGE

Other Datasheets by Fairchild (onsemi)

Part Number Description
IRLS510A Advanced Power MOSFET
IRLS520A Advanced Power MOSFET
IRLS530A Advanced Power MOSFET
IRLS610A Advanced Power MOSFET
IRLS620A Advanced Power MOSFET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 μA (Max.) @ VDS = 100V n Lower RDS(ON) : 0.046Ω (Typ.) IRLS540A BVDSS = 100 V RDS(on) = 0.058Ω ID = 17 A TO-220F 1 2 3 1.Gate 2. Drain 3.
Published: |