Datasheet4U Logo Datasheet4U.com

IRLS3034PBF - N-Channel MOSFET

Features

  • With TO-263( D2PAK ) packaging.
  • High speed switching.
  • Low gate input resistance.
  • Standard level gate drive.
  • Easy to use.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRLS3034PBF 40V Single N-Channel HEXFET Power MOSFET International Rectifier
IRLS3034-7PPBF 40V Single N-Channel HEXFET Power MOSFET International Rectifier
IRLS3036-7PPBF 60V Single N-Channel HEXFET Power MOSFET International Rectifier
IRLS3036PBF 60V Single N-Channel HEXFET Power MOSFET International Rectifier
IRLS3813PBF POWER MOSFET International Rectifier

Other Datasheets by Inchange Semiconductor

Part Number Description
IRLS3036 N-Channel MOSFET
IRLS3813 N-Channel MOSFET
IRLS4030 N-Channel MOSFET
IRLS610A N-Channel MOSFET
IRL1004 N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 195 PD Total Dissipation @TC=25℃ 375 Tj Max. Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 0.4 ℃/W IRLS3034PBF isc website：www.iscsemi.
Published: |