Datasheet4U Logo Datasheet4U.com

IRLS3036-7PPBF - 60V Single N-Channel HEXFET Power MOSFET

Features

  • 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs. Pulsewidth 300 EAR , Avalanche Energy (mJ) 250 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 180A 200 150 100 50 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www. irf. com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as l.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IRLS3036 N-Channel MOSFET INCHANGE
IRLS3034PBF N-Channel MOSFET INCHANGE
IRLS3813 N-Channel MOSFET INCHANGE
IRLS4030 N-Channel MOSFET INCHANGE
IRLS510A Advanced Power MOSFET Fairchild Semiconductor

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLS3036PBF 60V Single N-Channel HEXFET Power MOSFET
IRLS3034-7PPBF 40V Single N-Channel HEXFET Power MOSFET
IRLS3034PBF 40V Single N-Channel HEXFET Power MOSFET
IRLS3813PBF POWER MOSFET
IRLS-G5653 INTEGRATED SWITCHER

Full PDF Text Transcription

Click to expand full text
PD -97148 IRLS3036-7PPbF HEXFET® Power MOSFET www.datasheet4u.com Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching G l Hard Switched and High Frequency Circuits Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superior R*Q at 4.5V VGS l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free D S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 60V 1.5m: 1.9m: 300Ac 240A D S G S S S S D2Pak 7 Pin G D S Gate Drain Max. 300c 210 240 1000 380 2.5 ± 16 8.1 -55 to + 175 300 300 See Fig.
Published: |