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IRLS530A - Advanced Power MOSFET

Features

  • n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10µA (Max. ) @ VDS = 100V n Lower RDS(ON) : 0.101Ω (Typ. ) IRLS530A BVDSS = 100 V RDS(on) = 0.12Ω ID = 10.7 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Current.

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www.DataSheet4U.com Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10µA (Max.) @ VDS = 100V n Lower RDS(ON) : 0.101Ω (Typ.) IRLS530A BVDSS = 100 V RDS(on) = 0.12Ω ID = 10.7 A TO-220F 1 2 3 1.Gate 2. Drain 3.
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