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IRLS610A - Advanced Power MOSFET

Features

  • ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 μA (Max. ) @ VDS = 200V ! Lower RDS(ON) : 1.185Ω (Typ. ) IRLS610A BVDSS = 200 V RDS(on) = 0.046Ω ID = 2.5 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25℃) Continuous Drain Curren.

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www.DataSheet4U.com Advanced Power MOSFET FEATURES ! Avalanche Rugged Technology ! Rugged Gate Oxide Technology ! Lower Input Capacitance ! Improved Gate Charge ! Extended Safe Operating Area ! Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ! Lower RDS(ON) : 1.185Ω (Typ.) IRLS610A BVDSS = 200 V RDS(on) = 0.046Ω ID = 2.5 A TO-220F 1 2 3 1.Gate 2. Drain 3.
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