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IRLSL3034PBF - 40V Single N-Channel HEXFET Power MOSFET

Download the IRLSL3034PBF datasheet PDF. This datasheet also covers the IRLS3034PBF variant, as both devices belong to the same 40v single n-channel hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • Tstart =25°C (Single Pulse) Avalanche Current (A) 100 0.01 0.05 0.10 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ∆Τ j = 25°C and Tstart = 150°C. 1 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 1.0E-01 Fig 14. Typical Avalanche Current vs. Pulsewidth 300 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 195A Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRLS3034PBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRLSL3036PBF 60V Single N-Channel HEXFET Power MOSFET
IRLSL4030PBF 100V Single N-Channel HEXFET Power MOSFET
IRLS-G5653 INTEGRATED SWITCHER
IRLS3034-7PPBF 40V Single N-Channel HEXFET Power MOSFET
IRLS3034PBF 40V Single N-Channel HEXFET Power MOSFET

Full PDF Text Transcription

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PD -97364 IRLS3034PbF IRLSL3034PbF Applications www.datasheet4u.com l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superior R*Q at 4.5V VGS l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free G HEXFET® Power MOSFET D G S VDSS 40V RDS(on) typ. 1.4m: max. 1.
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