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IRLS4030-7PPBF - 100V Single N-Channel HEXFET Power MOSFET

Features

  • type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Du.

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Full PDF Text Transcription

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PD -97371 IRLS4030-7PPbF Applications www.datasheet4u.com l DC Motor Drive l l l l HEXFET® Power MOSFET D High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G S VDSS RDS(on) typ. max. ID D 100V 3.2mΩ 3.9mΩ 190A Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superior R*Q at 4.
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