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IRG7PH30K10PBF - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight Parameter Distribution Lead Free Package C VCES = 1200V IC = 23A, TC = 100°C G E tSC ≥ 10µs, TJ(max) =175°C n-channel C VCE(on) typ. = 2.05V Benefits.
  • High Efficiency in a Wide Range.

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PD - 96156A IRG7PH30K10PbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • • Low VCE (ON) Trench IGBT Technology Low Switching Losses Maximum Junction Temperature 175 °C 10 µS short Circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight Parameter Distribution Lead Free Package C VCES = 1200V IC = 23A, TC = 100°C G E tSC ≥ 10µs, TJ(max) =175°C n-channel C VCE(on) typ. = 2.
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