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IRG7PH35U-EP - INSULATED GATE BIPOLAR TRANSISTOR

This page provides the datasheet information for the IRG7PH35U-EP, a member of the IRG7PH35UPBF INSULATED GATE BIPOLAR TRANSISTOR family.

Features

  • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free IRG7PH35UPbF IRG7PH35U-EP C VCES = 1200V I.

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Full PDF Text Transcription

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PD - 97479 INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • • • Low VCE (ON) trench IGBT technology Low switching losses Maximum junction temperature 175 °C Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient Tight parameter distribution Lead -Free IRG7PH35UPbF IRG7PH35U-EP C VCES = 1200V I NOMINAL = 20A G E TJ(max) = 175°C n-channel C VCE(on) typ. = 1.9V Benefits • High efficiency in a wide range of applications • Suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses • Rugged transient performance for increased reliability • Excellent current sharing in parallel operation C GC E Applications • • • • U.P.
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