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IRG7PH35UD1-EP - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight Parameter Distribution Lead Free Package C G E TJ(max) = 150°C n-channel C VCE(on) typ. = 1.9V Benefits.
  • Device optimized for induction heating and soft switching.

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Full PDF Text Transcription

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PD - 97455 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS IRG7PH35UD1PbF IRG7PH35UD1-EP VCES = 1200V I NOMINAL = 20A Features • • • • • • • • • Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight Parameter Distribution Lead Free Package C G E TJ(max) = 150°C n-channel C VCE(on) typ. = 1.
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