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IRG7PH35UD1MPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
• • • • • • • • • Low VCE (ON) trench IGBT Technology Low Switching Losses Square RBSOA Ultra-Low VF Diode 1300Vpk Repetitive Transient Capacity 100% of the Parts Tested for ILM Positive VCE (ON) Temperature Co-Efficient Tight Parameter Distribution Lead Free Package
C
VCES = 1200V IC = 25A, TC = 100°C
G E
TJ(max) = 150°C
n-channel
VCE(on) typ. = 1.
IRG7PH35UD1MPBF Datasheet
