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PD - 97403
IRG7PH30K10DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features
• • • • • • • • • Low VCE (ON) Trench IGBT Technology Low switching losses 10 µS short circuit SOA Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) Temperature co-efficient Ultra fast soft Recovery Co-Pak Diode Tight parameter distribution Lead Free Package
C
VCES = 1200V IC = 16A, TC = 100°C
G E
tSC ≥ 10µs, TJ(max) = 150°C
n-channel
C
VCE(on) typ. = 2.
IRG7PH30K10DPBF Datasheet
