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Standard Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTH50P10 IXTT50P10
VDSS =
ID25 = ≤ RDS(on)
- 100V - 50A
55mΩ
TO-247 (IXTH)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062 in.) from case for 10s Plastic body for 10s Mounting torque (TO-247) TO-247 TO-268
Maximum Ratings
-100
V
-100
V
±20
V
±30
V
- 50
A
- 200
A
- 50
A
30
mJ
300
W
- 55 ... +150
°C
150
°C
- 55 ... +150
°C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
IXTT50P10 Datasheet
