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PolarHTTM Power MOSFET
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IXTQ 140N10P IXTT 140N10P
VDSS ID25
RDS(on)
= = ≤
100 V 140 A 11 mΩ
N-Channel Enhancement Mode Avalanche Rated
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C
Maximum Ratings 100 100 ±20 ±30 140 75 300 60 80 2.5 10 600 -55 ... +175 175 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C °C
G = Gate S = Source G S D = Drain TAB = Drain D (TAB)
TO-3P (IXTQ)
G
D
S
(TAB)
TO-268 (IXTT)
1.6 mm (0.062 in.
IXTT140N10P Datasheet
