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Preliminary Technical Information
PolarPTM Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTH48P20P IXTT48P20P
VDSS ID25
RDS(on)
= = ≤
- 200V - 48A 85mΩ
TO-247 (IXTH)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings - 200 - 200 ±20 ±30 - 48 -144 - 48 2.5 10 462 - 55 ... +150 150 - 55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. N/lb. g g
G
(TAB) D S
TO-268 (IXTT)
G
S
(TAB) G = Gate S = Source D = Drain TAB = Drain
Features:
z z z z
1.6mm (0.062 in.
IXTT48P20P Datasheet
