IXTT02N450HV - High Voltage Power MOSFET

Datasheet Summary

Features

High Blocking Voltage.
High Voltage Packages Advantages.
Easy to Mount.
Space Savings.
High Power Density.

IXYS

📥 Download Datasheet

Datasheet Details

Part number	IXTT02N450HV
Manufacturer	IXYS
File Size	209.94 KB
Description	High Voltage Power MOSFET
Datasheet	IXTT02N450HV Datasheet
Additional preview pages of the IXTT02N450HV datasheet.

📁 Similar Datasheet

IXTT100N25P - N-Channel MOSFET (IXYS Corporation)
IXTT10P50 - P-Channel MOSFET (IXYS Corporation)
IXTT110N10P - N-Channel MOSFET (IXYS Corporation)
IXTT11P50 - P-Channel MOSFET (IXYS Corporation)
IXTT140N10P - Power MOSFET (IXYS Corporation)
IXTT1N100 - High-Voltage MOSFET (IXYS Corporation)
IXTT28N50Q - Power MOSFET (International Rectifier)
IXTT48P20P - Power MOSFET (IXYS Corporation)
IXTT52N30P - Power MOSFET (IXYS Corporation)
IXTT64N25P - PolarHT Power MOSFET (IXYS Corporation)

Other Datasheets by IXYS

IXTT10N100D2 - Depletion Mode MOSFET
IXTT10P60 - Power MOSFET
IXTT110N10L2 - Power MOSFET
IXTT120N15P - Power MOSFET
IXTT12N140 - Power MOSFET
IXTT12N150 - High Voltage Power MOSFET
IXTT12N150HV - N-Channel Power MOSFET
IXTT140N075L2HV - Power MOSFET

Full PDF Text Transcription

Click to expand full text

High Voltage Power MOSFET IXTT02N450HV IXTH02N450HV VDSS I D25 RDS(on) = 4500V = 200mA  625 N-Channel Enhancement Mode Symbol VDSS VDGR VGSS VGSM ID25 IDM PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque TO-268HV TO-247HV Maximum Ratings 4500 V 4500 V 20 V 30 V 200 mA 600 mA 113 W - 55 ... +150 C 150 C - 55 ... +150 C 300 °C 260 °C 1.13/10 Nm/lb.in 4 g 6 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V IDSS VDS = 3.6kV, VGS = 0V VDS = 4.5kV VDS = 3.

Published: Feb 6, 2019 |