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Depletion Mode MOSFET
N-Channel
Preliminary Technical Information
IXTH10N100D2 IXTT10N100D2
VDSX = ID(on) >
RDS(on)
D
1000V 10A
1.5
G S
TO-247 (IXTH)
G DS
D (Tab)
Symbol
VDSX VDGX
VGSX VGSM
PD
TJ TJM Tstg
TL TSOLD
Md
Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-247 TO-268
Maximum Ratings
1000
V
1000
V
20
V
30
V
695
W
- 55 ... +150
C
150
C
- 55 ... +150
C
300
°C
260
°C
1.13 / 10
Nm/lb.in.
6
g
4
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values Min. Typ. Max.
BVDSX
VGS = - 5V, ID = 250A
1000
V
VGS(off)
VDS = 25V, ID = 1mA
- 2.5
- 4.